onsemi 2SC5569-TD-E

onsemi · Transistors (BJTs) · MPN 2SC5569-TD-E

No reviews yet — be the first to review onsemi 2SC5569-TD-E.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)330MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation3.5W
Number1 NPN
typeNPN
Current - Collector(Ic)7A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))160mV

Technical details

Bipolar (BJT) Transistor NPN 50V 7A 330MHz 3.5W Surface Mount SOT-89

Related Transistors (BJTs)