onsemi 2SC5566-TD-E

onsemi · Transistors (BJTs) · MPN 2SC5566-TD-E

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)400MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation3.5W
Number1 NPN
typeNPN
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))105mV

Technical details

Bipolar (BJT) Transistor NPN 50V 4A 400MHz 3.5W Surface Mount SOT-89

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