onsemi 2SC5415AF-TD-E

onsemi · Transistors (BJTs) · MPN 2SC5415AF-TD-E

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Specifications

Emitter-Base Voltage(Vebo)2V
Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation800mW
Current - Collector(Ic)100mA
Transition frequency(fT)6.7GHz
typeNPN
Number1 NPN

Technical details

12V 800mW 100mA NPN TO-243AA Bipolar RF Transistors RoHS

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