onsemi 2SC3651-TD-E

onsemi · Transistors (BJTs) · MPN 2SC3651-TD-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain500
Pd - Power Dissipation500mW
typeNPN
Current - Collector(Ic)200mA
Vce Saturation(VCE(sat))500mV
Operating Temperature-

Technical details

100V 500 NPN 200mA TO-243AA Single Bipolar Transistors RoHS

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