onsemi 2SC3647S-TD-E

onsemi · Transistors (BJTs) · MPN 2SC3647S-TD-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain100
Pd - Power Dissipation1.5W
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-
Vce Saturation(VCE(sat))220mV

Technical details

100V 100 1 NPN NPN 2A SOT-89-3 Single Bipolar Transistors RoHS

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