onsemi · Transistors (BJTs) · MPN 2SC3503E
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 150MHz |
| Collector - Emitter Voltage VCEO | 300V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Pd - Power Dissipation | 7W |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 600mV |
300V 100 NPN 100mA TO-126-3 Single Bipolar Transistors RoHS