onsemi 2SC2712GT1G

onsemi · Transistors (BJTs) · MPN 2SC2712GT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation200mW
typeNPN
Current - Collector(Ic)150mA
Vce Saturation(VCE(sat))250mV

Technical details

50V NPN 150mA Single Bipolar Transistors RoHS

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