onsemi 2SB892S-AE

onsemi · Transistors (BJTs) · MPN 2SB892S-AE

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1W
typeNPN+PNP
Vce Saturation(VCE(sat))400mV

Technical details

50V NPN+PNP Single Bipolar Transistors RoHS

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