onsemi 2SB815-6-TB-E

onsemi · Transistors (BJTs) · MPN 2SB815-6-TB-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO15V
DC Current Gain200
Pd - Power Dissipation200mW
typePNP
Current - Collector(Ic)700mA
Vce Saturation(VCE(sat))80mV

Technical details

15V 200 PNP 700mA CP-3 Single Bipolar Transistors RoHS

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