onsemi 2SB1215S-E

onsemi · Transistors (BJTs) · MPN 2SB1215S-E

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO100V
DC Current Gain140
Pd - Power Dissipation20W
typePNP
Current - Collector(Ic)3A
Operating Temperature-
Vce Saturation(VCE(sat))150mV

Technical details

100V 140 PNP 3A TO-251 Single Bipolar Transistors RoHS

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