onsemi 2SB1165S

onsemi · Transistors (BJTs) · MPN 2SB1165S

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation20W
typePNP
Current - Collector(Ic)5A
Vce Saturation(VCE(sat))400mV

Technical details

50V PNP 5A Single Bipolar Transistors RoHS

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