onsemi 2SB1124T-TD-E

onsemi · Transistors (BJTs) · MPN 2SB1124T-TD-E

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Specifications

Current - Collector Cutoff1uA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain200
Pd - Power Dissipation500mW
typePNP
Current - Collector(Ic)3A
Operating Temperature-
Vce Saturation(VCE(sat))350mV

Technical details

50V 200 PNP 3A SOT-89-3 Single Bipolar Transistors RoHS

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