onsemi 2SB1122S-TD-E

onsemi · Transistors (BJTs) · MPN 2SB1122S-TD-E

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain100
Pd - Power Dissipation-
typePNP
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))180mV
Operating Temperature-

Technical details

50V 100 PNP 1A SOT-89-3 Single Bipolar Transistors RoHS

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