onsemi 2SA2169-E

onsemi · Transistors (BJTs) · MPN 2SA2169-E

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Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain200
Pd - Power Dissipation20W
typePNP
Current - Collector(Ic)10A
Operating Temperature-
Vce Saturation(VCE(sat))180mV

Technical details

50V 200 PNP 10A TO-251-3 Single Bipolar Transistors RoHS

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