onsemi · Transistors (BJTs) · MPN 2SA2013-TD-E
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| Current - Collector Cutoff | 1uA |
|---|---|
| Transition frequency(fT) | 360MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 6V |
| DC Current Gain | 200 |
| Pd - Power Dissipation | 3.5W |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 4A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 105mV |
Bipolar (BJT) Transistor PNP 50V 4A 360MHz 3.5W Surface Mount SOT-89