onsemi · Transistors (BJTs) · MPN 2SA2012-TD-E
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 350MHz |
| Collector - Emitter Voltage VCEO | 30V |
| DC Current Gain | 200 |
| Pd - Power Dissipation | 3.5W |
| type | PNP |
| Current - Collector(Ic) | 5A |
| Operating Temperature | - |
| Vce Saturation(VCE(sat)) | 170mV |
30V 200 PNP 5A SOT-89-3 Single Bipolar Transistors RoHS