onsemi · Transistors (BJTs) · MPN 2SA1962OTU
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| Current - Collector Cutoff | 5uA |
|---|---|
| Transition frequency(fT) | 30MHz |
| Collector - Emitter Voltage VCEO | 250V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 55 |
| Pd - Power Dissipation | 130W |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 17A |
| Operating Temperature | -50℃~+150℃ |
| Vce Saturation(VCE(sat)) | 400mV |
Bipolar (BJT) Transistor PNP 250V 17A 30MHz 130W Through Hole TO-3P