onsemi 2SA1709T-EPN-AN

onsemi · Transistors (BJTs) · MPN 2SA1709T-EPN-AN

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)120MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation1W
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))400mV

Technical details

100V 2A Single Bipolar Transistors RoHS

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