onsemi · Transistors (BJTs) · MPN 2N6520TA
No reviews yet — be the first to review onsemi 2N6520TA.
| Current - Collector Cutoff | 50nA |
|---|---|
| Transition frequency(fT) | 200MHz |
| Collector - Emitter Voltage VCEO | 350V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 20 |
| Pd - Power Dissipation | 625mW |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 500mA |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 500mV |
Bipolar (BJT) Transistor PNP 350V 500mA 200MHz 625mW Through Hole TO-92-3L