onsemi 2N6517TA

onsemi · Transistors (BJTs) · MPN 2N6517TA

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO350V
DC Current Gain20
Pd - Power Dissipation625mW
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))-

Technical details

350V 20 NPN 500mA TO-92-3 Single Bipolar Transistors RoHS

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