onsemi 2N6491G

onsemi · Transistors (BJTs) · MPN 2N6491G

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)5MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain20
Pd - Power Dissipation1.8W
typePNP
Current - Collector(Ic)15A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))3.5V

Technical details

80V 20 PNP 15A TO-220 Single Bipolar Transistors RoHS

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