onsemi 2N6487G

onsemi · Transistors (BJTs) · MPN 2N6487G

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Specifications

Current - Collector Cutoff1mA
Transition frequency(fT)5MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain150
Pd - Power Dissipation75W
Number1 NPN
typeNPN
Current - Collector(Ic)15A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))3.5V

Technical details

Bipolar (BJT) Transistor NPN 60V 15A 5MHz 75W Through Hole TO-220

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