onsemi 2N6284G

onsemi · Transistors (BJTs) · MPN 2N6284G

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Specifications

Vbe Saturation(VBE(sat))4V
Current - Collector Cutoff-
Vbe On(VBE(on))2.8V
Transition frequency(fT)-
Collector - Emitter Voltage VCEO100V
DC Current Gain750
Pd - Power Dissipation160W
typeNPN
Current - Collector(Ic)20A
Vce Saturation(VCE(sat))3V
Operating Temperature-65℃~+200℃@(Tj)

Technical details

100V 750 NPN 20A TO-204(TO-3) Single Bipolar Transistors RoHS

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