onsemi 2N6052G

onsemi · Transistors (BJTs) · MPN 2N6052G

No reviews yet — be the first to review onsemi 2N6052G.

Specifications

Current - Collector Cutoff-
Collector - Emitter Voltage VCEO100V
DC Current Gain750
Pd - Power Dissipation150W
typePNP
Current - Collector(Ic)12A
Vce Saturation(VCE(sat))3V
Operating Temperature-65℃~+200℃@(Tj)

Technical details

100V 750 PNP 12A TO-204-2(TO-3) Single Bipolar Transistors RoHS

Related Transistors (BJTs)