onsemi 2N5884G

onsemi · Transistors (BJTs) · MPN 2N5884G

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Specifications

Current - Collector Cutoff2mA
Transition frequency(fT)4MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain20
Pd - Power Dissipation200W
typePNP
Current - Collector(Ic)25A
Vce Saturation(VCE(sat))4V
Operating Temperature-65℃~+200℃

Technical details

80V 20 PNP 25A TO-204-2 Single Bipolar Transistors RoHS

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