onsemi 2N5550TAR

onsemi · Transistors (BJTs) · MPN 2N5550TAR

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO140V
DC Current Gain60
Pd - Power Dissipation625mW
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-
Vce Saturation(VCE(sat))250mV

Technical details

140V 60 NPN 600mA TO-92-3 Single Bipolar Transistors RoHS

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