onsemi 2N5401RA

onsemi · Transistors (BJTs) · MPN 2N5401RA

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO150V
DC Current Gain60
Pd - Power Dissipation625mW
typePNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

150V 60 PNP 600mA TO-92(TO-226) Single Bipolar Transistors RoHS

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