onsemi · Transistors (BJTs) · MPN 2N5307
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | - |
| Collector - Emitter Voltage VCEO | 40V |
| DC Current Gain | 2000 |
| Pd - Power Dissipation | 625mW |
| type | NPN |
| Current - Collector(Ic) | 1.2A |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Vce Saturation(VCE(sat)) | 1.4V |
40V 2000 NPN 1.2A TO-92-3 Single Bipolar Transistors RoHS