onsemi · Transistors (BJTs) · MPN 2N5195G
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| Current - Collector Cutoff | 2mA |
|---|---|
| Transition frequency(fT) | 2MHz |
| Collector - Emitter Voltage VCEO | 80V |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 7 |
| Pd - Power Dissipation | 40W |
| Number | 1 PNP |
| type | PNP |
| Current - Collector(Ic) | 4A |
| Operating Temperature | -65℃~+150℃ |
| Vce Saturation(VCE(sat)) | 1.4V |
Bipolar (BJT) Transistor PNP 80V 4A 2MHz 40W Through Hole TO-225-3