onsemi 2N4920G

onsemi · Transistors (BJTs) · MPN 2N4920G

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Specifications

Current - Collector Cutoff100uA
Transition frequency(fT)3MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain150
Pd - Power Dissipation30W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))600mV

Technical details

Bipolar (BJT) Transistor PNP 80V 3A 3MHz 30W Through Hole TO-126

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