onsemi 2N4401TA

onsemi · Transistors (BJTs) · MPN 2N4401TA

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain80
Pd - Power Dissipation625mW
Number1 NPN
typeNPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))400mV

Technical details

Bipolar (BJT) Transistor NPN 40V 600mA 250MHz 625mW Through Hole TO-92-3L

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