onsemi 2N3773G

onsemi · Transistors (BJTs) · MPN 2N3773G

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Specifications

Current - Collector Cutoff2mA
Collector - Emitter Voltage VCEO160V
Emitter-Base Voltage VEBO7V
DC Current Gain15
Pd - Power Dissipation150W
Number1 NPN
typeNPN
Current - Collector(Ic)16A
Vce Saturation(VCE(sat))1.4V
Operating Temperature-65℃~+200℃

Technical details

Bipolar (BJT) Transistor NPN 160V 16A 150W Through Hole TO-3

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