onsemi 2N3391A

onsemi · Transistors (BJTs) · MPN 2N3391A

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO25V
Emitter-Base Voltage VEBO5V
DC Current Gain250
Pd - Power Dissipation625mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

25V 250 1 NPN NPN 500mA TO-92-3 Single Bipolar Transistors RoHS

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