onsemi 2N3055AG

onsemi · Transistors (BJTs) · MPN 2N3055AG

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Specifications

Current - Collector Cutoff700uA
Transition frequency(fT)6MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
DC Current Gain10
Pd - Power Dissipation115W
Number1 NPN
typeNPN
Current - Collector(Ic)15A
Operating Temperature-65℃~+200℃
Vce Saturation(VCE(sat))5V

Technical details

Bipolar (BJT) Transistor NPN 60V 15A 6MHz 115W Through Hole TO-3

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