NXP · Transistors (BJTs) · MPN PUMD17/ZL115
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| Current - Collector Cutoff | 100nA |
|---|---|
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 10V |
| Pd - Power Dissipation | 200mW |
| Number | 1 NPN + 1 PNP |
| type | NPN+PNP |
| Current - Collector(Ic) | 100mA |
| Vce Saturation(VCE(sat)) | 150mV |
| Operating Temperature | -65℃~+150℃ |
50V 1 NPN + 1 PNP NPN+PNP 100mA Single Bipolar Transistors RoHS