NXP PUMB9/ZL115

NXP · Transistors (BJTs) · MPN PUMB9/ZL115

No reviews yet — be the first to review NXP PUMB9/ZL115.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation200mW
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))100mV
Operating Temperature-65℃~+150℃

Technical details

50V PNP 2 PNP 100mA Single Bipolar Transistors RoHS

Related Transistors (BJTs)