NXP PMP4201G135

NXP · Transistors (BJTs) · MPN PMP4201G135

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Specifications

Current - Collector Cutoff15nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation300mW
Number2 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))400mV
Operating Temperature-65℃~+150℃

Technical details

45V 200 2 NPN NPN 100mA TSSOP-5 Single Bipolar Transistors RoHS

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