NXP PMBT2222AYS115

NXP · Transistors (BJTs) · MPN PMBT2222AYS115

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Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)300MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
Pd - Power Dissipation400mW
typeNPN
Number2 NPN
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃

Technical details

40V NPN 2 NPN 600mA SOT-23-3 Single Bipolar Transistors RoHS

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