NXP PHPT61003PY115

NXP · Transistors (BJTs) · MPN PHPT61003PY115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO8V
Pd - Power Dissipation25W
typePNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))360mV
Operating Temperature-55℃~+175℃

Technical details

100V PNP 3A Single Bipolar Transistors RoHS

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