NXP PHPT610030PK115

NXP · Transistors (BJTs) · MPN PHPT610030PK115

No reviews yet — be the first to review NXP PHPT610030PK115.

Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO8V
Pd - Power Dissipation5W
typePNP
Number2 PNP
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))360mV
Operating Temperature-55℃~+175℃

Technical details

100V PNP 2 PNP 3A Single Bipolar Transistors RoHS

Related Transistors (BJTs)