NXP PHPT610030NK115

NXP · Transistors (BJTs) · MPN PHPT610030NK115

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO100V
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation25W
typeNPN
Number2 NPN
Current - Collector(Ic)3A
Vce Saturation(VCE(sat))150mV
Operating Temperature-55℃~+175℃

Technical details

100V NPN 2 NPN 3A Single Bipolar Transistors RoHS

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