NXP PHPT60606PY115

NXP · Transistors (BJTs) · MPN PHPT60606PY115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)110MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO8V
Pd - Power Dissipation5W
Number1 PNP
typePNP
Current - Collector(Ic)6A
Vce Saturation(VCE(sat))525mV
Operating Temperature-55℃~+175℃

Technical details

60V 1 PNP PNP 6A Single Bipolar Transistors RoHS

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