NXP PDTD143XU115

NXP · Transistors (BJTs) · MPN PDTD143XU115

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)225MHz
Collector - Emitter Voltage VCEO50V
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+175℃

Technical details

50V 1 NPN NPN 500mA Single Bipolar Transistors RoHS

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