NXP · Transistors (BJTs) · MPN PDTD113EU135
No reviews yet — be the first to review NXP PDTD113EU135.
| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 225MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 10V |
| Pd - Power Dissipation | 425mW |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Vce Saturation(VCE(sat)) | 100mV |
| Operating Temperature | -55℃~+175℃ |
50V NPN 500mA Single Bipolar Transistors RoHS