NXP · Transistors (BJTs) · MPN PDTD113EQA147
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | 210MHz |
| Collector - Emitter Voltage VCEO | 50V |
| Emitter-Base Voltage VEBO | 10V |
| Pd - Power Dissipation | 325mW |
| Number | 1 NPN |
| type | NPN |
| Current - Collector(Ic) | 500mA |
| Vce Saturation(VCE(sat)) | 100mV |
| Operating Temperature | -55℃~+150℃ |
50V 1 NPN NPN 500mA Single Bipolar Transistors RoHS