NXP PDTC144EU/DG/B3115

NXP · Transistors (BJTs) · MPN PDTC144EU/DG/B3115

No reviews yet — be the first to review NXP PDTC144EU/DG/B3115.

Specifications

Current - Collector Cutoff100nA
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation200mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

50V 1 NPN NPN 100mA Single Bipolar Transistors RoHS

Related Transistors (BJTs)