NXP PDTC143ZQA147

NXP · Transistors (BJTs) · MPN PDTC143ZQA147

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Specifications

Collector - Emitter Voltage VCEO50V
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Resistor Ratio10
Pd - Power Dissipation280mW
Voltage - Input(Max)(VI(off))600mV@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.1V@5mA,0.3V

Technical details

50V 100mA 280mW Single, Pre-Biased Bipolar Transistors RoHS

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