NXP PDTC114ET/YA215

NXP · Transistors (BJTs) · MPN PDTC114ET/YA215

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)230MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO10V
Pd - Power Dissipation250mW
Number1 NPN
typeNPN
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))150mV
Operating Temperature-65℃~+150℃

Technical details

50V 1 NPN NPN 100mA SOT-23-3 Single Bipolar Transistors RoHS

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