NXP PDTA143ZE/DG/B3115

NXP · Transistors (BJTs) · MPN PDTA143ZE/DG/B3115

No reviews yet — be the first to review NXP PDTA143ZE/DG/B3115.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation250mW
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))100mV
Operating Temperature-65℃~+150℃

Technical details

50V PNP 100mA Single Bipolar Transistors RoHS

Related Transistors (BJTs)