NXP PDTA143XQA147

NXP · Transistors (BJTs) · MPN PDTA143XQA147

No reviews yet — be the first to review NXP PDTA143XQA147.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)180MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO7V
Pd - Power Dissipation440mW
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))100mV

Technical details

50V PNP 100mA Single Bipolar Transistors RoHS

Related Transistors (BJTs)